Electronic and Optical Properties of Semiconductors: A Study Based on the Empirical Tight Binding Model PDF (Adobe DRM) download by Lok C. Lew Yan Voon

Electronic and Optical Properties of Semiconductors: A Study Based on the Empirical Tight Binding Model

Dissertation.Com.
Publication date: October 2005
ISBN: 9781599421254
Digital Book format: PDF (Adobe DRM)
Rating starRating starRating star 1 user rated this ebook - write a review of Electronic and Optical Properties of Semiconductors: A Study Based on the Empirical Tight Binding Model.

Buy PDF

List price:
$13.00
Our price:
$11.99

You save: $1.01 (8%)
GET THIS EBOOK
FOR FREE!
Join our Facebook sweepstake, share and
get 10 likes. Winners
get notified in 24H!
This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
Please sign in to review this product.
Format:
Devices:
Electronic and Optical Properties of Semiconductors: A Study Based on the Empirical Tight Binding Model PDF (Adobe DRM) can be read on any device that can open PDF (Adobe DRM) files.

File Size:
1120 Kb
Language:
ENG
Copy From Text:
Enabled. Limit of 25 selections within 30 days.
Printing:
Enabled. Limit of 25 pages within 30 days.