Modeling and Characterization of RF and Microwave Power FETs PDF (Adobe DRM) download by Peter Aaen

Modeling and Characterization of RF and Microwave Power FETs

Cambridge University Press
Publication date: June 2007
ISBN: 9780511372414
Digital Book format: PDF (Adobe DRM)

Buy PDF

List price:
$70.00
Our price:
$64.99

You save: $5.01 (7%)
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Pl 8 is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Please sign in to review this product.
Format:
Devices:
Modeling and Characterization of RF and Microwave Power FETs PDF (Adobe DRM) can be read on any device that can open PDF (Adobe DRM) files.

File Size:
5130 Kb
Language:
ENG
Copy From Text:
Enabled. Limit of 5 selections within 30 days.
Printing:
Enabled. Limit of 20 pages within 30 days.